2N2222A – Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 1.2 W, 800 mA, 30 hFE

The Multicomp 2N2222A is a through hole, silicon planar, high-speed switching, NPN transistor housed in a TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. This transistor is used for switching, linear DC power supply and VHF amplifier applications.

• Collector emitter voltage (Vce) of 40V
• Continuous collector current (Ic) of 800mA
• Power dissipation of 500mW
• Operating junction temperature range from -65°C to 200°C
• Collector emitter saturation voltage of 1V at 500mA collector current
• DC current gain is greater than 35 at Ic=0.1 mA

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial