2N2907A – Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 50 hFE

The 2N2907A from Multicomp is a through hole, silicon planar PNP high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. The device is suitable for switching and amplification.

• Collector emitter voltage (Vce) of -60V
• Continuous collector current (Ic) of -600mA
• Power dissipation of 400mW
• Operating junction temperature range from -55°C to 175°C
• Collector emitter saturation voltage of -1.3V at Ic=150mA
• DC current gain is greater than 20 at Ic=500mA

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial