The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. The case is made of molded plastic, “Green” molding compound (UL94V-0).
Low on-resistance
Low gate threshold voltage
Low input capacitance
Fast switching speed
Low input/output leakage
Halogen and antimony-free
Green device
Qualified to AEC-Q101 standards for high reliability
Applications
Motor Drive & Control, Power Management, Defence, Military & Aerospace
Product Information
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N Channel
:
210mA
:
60V
:
13.5ohm
:
10V
:
2.5V
:
300mW
:
SOT-23
:
3Pins
:
150°C
:
–
:
–
:
MSL 1 – Unlimited
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