Infineon BSM25GD120DN2E3224 Transistors 35A, 1200V, N-CHANNEL IGBT Modules
SPECIFICATIONS
Mfr Package Description | ECONOPACK-17 |
Status | Transferred |
Case Connection | ISOLATED |
Collector Current-Max (IC) | 35.0 A |
Collector-emitter Voltage-Max | 1200.0 V |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
Gate-emitter Voltage-Max | 20.0 V |
JESD-30 Code | R-XUFM-X17 |
Number of Elements | 6.0 |
Number of Terminals | 17 |
Operating Temperature-Max | 150.0 Cel |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 200.0 W |
Qualification Status | Not Qualified |
Sub Category | Insulated Gate BIP Transistors |
Surface Mount | NO |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 450.0 ns |
Turn-on Time-Nom (ton) | 140.0 ns |
VCEsat-Max | 3.2 V |