Description

Infineon BSM25GD120DN2E3224 Transistors 35A, 1200V, N-CHANNEL IGBT Modules

SPECIFICATIONS

Mfr Package Description ECONOPACK-17
Status Transferred
Case Connection ISOLATED
Collector Current-Max (IC) 35.0 A
Collector-emitter Voltage-Max 1200.0 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20.0 V
JESD-30 Code R-XUFM-X17
Number of Elements 6.0
Number of Terminals 17
Operating Temperature-Max 150.0 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200.0 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450.0 ns
Turn-on Time-Nom (ton) 140.0 ns
VCEsat-Max 3.2 V

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