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Infineon BSM25GD120DN2E3224 Transistors 35A, 1200V, N-CHANNEL IGBT Modules
SPECIFICATIONS
| Mfr Package Description | ECONOPACK-17 |
| Status | Transferred |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 35.0 A |
| Collector-emitter Voltage-Max | 1200.0 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Gate-emitter Voltage-Max | 20.0 V |
| JESD-30 Code | R-XUFM-X17 |
| Number of Elements | 6.0 |
| Number of Terminals | 17 |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 200.0 W |
| Qualification Status | Not Qualified |
| Sub Category | Insulated Gate BIP Transistors |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 450.0 ns |
| Turn-on Time-Nom (ton) | 140.0 ns |
| VCEsat-Max | 3.2 V |
