OP231 – Infrared Emitter, Hermetic, 18 °, TO-46, 100 mA, 2 V, 500 ns, 250 ns

The OP231 is a gallium aluminium arsenide (GaAIAs) Infrared Emitting Diode, mounted in a hermetic metal housing. The gallium aluminium arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. The device is lensed to provide a narrow beam angle (18°) between half power points. The 890nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the specified radiant intensity of the OP231 series facilitates easy design in beam interrupt applications in conjunction with the OP800 or OP598 series photosensors. It is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors.

• Focused and non-focused optical light pattern
• Enhanced temperature range
• Mechanically and spectrally matched to other OPTEK devices

Applications

Wireless, Automation & Process Control, Sensing & Instrumentation, Industrial