SUD50P06-15-GE3 Vishay Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

SPECIFICATIONS

Mfr Package Description	HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
REACH Compliant	Yes
EU RoHS Compliant	Yes
Status	Active
Avalanche Energy Rating (Eas)	125.0 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID)	50.0 A
Drain Current-Max (ID)	50.0 A
Drain-source On Resistance-Max	0.015 ohm
DS Breakdown Voltage-Min	60.0 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3
Moisture Sensitivity Level	1
Number of Elements	1.0
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150.0 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	113.0 W
Pulsed Drain Current-Max (IDM)	80.0 A
Qualification Status	Not Qualified
Sub Category	Other Transistors
Surface Mount	YES
Terminal Finish	Matte Tin (Sn)
Terminal Form	GULL WING
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON