SUD50P06-15-GE3 Vishay Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

SUD50P06-15-GE3:datasheet

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SKU: SUD50P06-15-GE3 Categories: ,
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Description

SPECIFICATIONS

Mfr Package Description HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Avalanche Energy Rating (Eas) 125.0  mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 50.0  A
Drain Current-Max (ID) 50.0  A
Drain-source On Resistance-Max 0.015  ohm
DS Breakdown Voltage-Min 60.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1.0
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 113.0  W
Pulsed Drain Current-Max (IDM) 80.0  A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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