Description

Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors – Bipolar (BJT) – Single
Manufacturer Toshiba Semiconductor and Storage
Series
Packaging ? Cut Tape (CT) ?
Part Status Active
Transistor Type PNP
Current – Collector (Ic) (Max) 150mA
Voltage – Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current – Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power – Max 320mW
Frequency – Transition 250MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23

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